Electrooptical Characterization of New Classes of Silicon Carbide UV Photodetectors

Electrical Characterization of Microelectromechanical Silicon Carbide Resonators

This manuscript describes the findings of a study to investigate the performance of SiC MEMS resonators with respect to resonant frequency and quality factor under a variety of testing conditions, including various ambient pressures, AC drive voltages, bias potentials and temperatures. The sample set included both single-crystal and polycrystalline 3C-SiC lateral resonators. The experimental re...

synthesis and characterization of some new cyclometalated organoplatinum(ii) complexes containing phosphite ligand

در این تحقیق روشی جهت سنتز یک سری از کمپلکس های پلاتین (ii) حاوی لیگاند های دهنده ی فسفری شامل فسفیت و فسفین ارائه شده است. واکنش پیش ماده ی پلاتین (ii)،trans/cis- [ptcl2(sme2)2] ، با 2 اکی مولار از لیگاند p(oph)3در حلال بنزن کمپلکس1، cis-[ptcl2(p(oph)3)2] را تولید می نماید. جهت سنتز کمپلکس سایکلو متال فسفیتی، کمپلکس 1 با 1 اکی والان واکنشگر ptcl2 در حلال زایلن در شرایط رفلاکس زیر گاز آرگون م...

Silicon Carbide UV Sensor and Junction Field - Effect

Silicon Carbide Power Device Characterization for HEVs

The emergence of silicon carbide(SiC-) based power semiconductor switches, with their superior features compared with silicon(Si-) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power...

Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors